Beam geometrical effects on planar selective area epitaxy of InP/GaInAs heterostructures

被引：0

作者：

Univ of Ulm, Ulm, Germany ^{[1
]}

机构：

来源：

J Cryst Growth | / 1-4卷 / 302-307期

关键词：

Geometry - Heterojunctions - Masks - Molecular beam epitaxy - Molecular beams - Semiconducting gallium compounds - Semiconducting indium phosphide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

This communication reports on the lateral growth at planar selective area epitaxy (SAE) grown vertical sidewall ridge structures. This lateral growth is investigated as a function of the angle of the molecular beam with respect to the substrate surface, the width of the mask and the ridge size. The results prove that for molecular beams arriving perpendicularly to the substrate surface the lateral growth is about half compared to the conventional geometry. This enables the planar embedded growth of heterostructures as used in integrated device approaches using identical growth parameters as in the planar SAE.

引用