EFFECTS OF GROWTH TEMPERATURE AND SUBSTRATE ORIENTATION ON THE ENTRY OF TELLURIUM INTO EPITAXIAL GALLIUM ARSENIDE FILMS.

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作者：
Lavrent'eva, L.G. [1 ]
Vilisova, M.D. [1 ]
Moskovkin, V.A. [1 ]
Toropov, S.E. [1 ]
机构：
[1] V. D. Moskovkin, Siberian Physicotechnical Institute, Tomsk State University, Sux
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| 1600年 / 25期
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