共 50 条
- [31] Identification of plasma induced failure modes in the development of a bipolar-complementary metal-oxide-semiconductor process [J]. J Vac Sci Technol A, 3 pt 1 (943):
- [36] Octahedral-structured gigantic precipitates as the origin of gate-oxide defects in metal-oxide-semiconductor large-scale-integrated circuits [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B): : 812 - 817
- [38] Octahedral-structured gigantic precipitates as the origin of gate-oxide defects in metal-oxide-semiconductor large-scale-integrated circuits [J]. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1996, 35 (2 B): : 812 - 817
- [39] HYDROGEN INDUCED DRIFT IN PALLADIUM GATE METAL-OXIDE-SEMICONDUCTOR STRUCTURES. [J]. Journal of Applied Physics, 1984, 56 (04): : 1177 - 1188