Plasma-induced gate-oxide charging issues for sub-0.5 μm complementary metal-oxide-semiconductor technologies

被引:0
|
作者
Stamper, A.K.
Lasky, J.B.
Adkisson, J.W.
机构
来源
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | 1995年 / 13卷 / 3 pt 1期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] PLASMA-INDUCED GATE-OXIDE CHARGING ISSUES FOR SUB-0.5 MU-M COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES
    STAMPER, AK
    LASKY, JB
    ADKISSON, JW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 905 - 911
  • [2] Neural network characterization of plasma-induced charging damage on thick oxide-based metal-oxide-semiconductor device
    Kim, Byungwhan
    Kwon, Sang Hee
    Kwon, Kwang Ho
    Kang, Sangwoo
    Baek, Kyu-Ha
    Lee, Jin Ho
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (11)
  • [3] IDENTIFICATION OF PLASMA-INDUCED FAILURE MODES IN THE DEVELOPMENT OF A BIPOLAR-COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR PROCESS
    HACKENBERG, JJ
    DION, MJ
    HEMMENWAY, DF
    PEARCE, LG
    WERNER, JW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03): : 943 - 947
  • [4] Mitigation of Complementary Metal-Oxide-Semiconductor Variability with Metal Gate Metal-Oxide-Semiconductor Field-Effect Transistors
    Yang, Ji-Woon
    Park, Chang Seo
    Smith, Casey E.
    Adhikari, Hemant
    Huang, Jeff
    Heh, Dawei
    Majhi, Prashant
    Jammy, Raj
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
  • [5] Dopant profile control and metrology requirements for sub-0.5 mu m metal-oxide-semiconductor field-effect transistors
    Duane, M
    Nunan, P
    terBeek, M
    Subrahmanyan, R
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01): : 218 - 223
  • [6] HYDROGEN-INDUCED OXIDE SURFACE CHARGING IN PALLADIUM-GATE METAL-OXIDE-SEMICONDUCTOR DEVICES
    ARMGARTH, M
    NYLANDER, C
    SVENSSON, C
    LUNDSTROM, I
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) : 2956 - 2963
  • [7] Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications
    Yonsei Univ, Seoul, Korea, Republic of
    Thin Solid Films, 1-2 (56-59):
  • [8] Experimental determination of the frequency factor of thermal annealing processes in metal-oxide-semiconductor gate-oxide structures
    Saigne, F
    Dusseau, L
    Albert, L
    Fesquet, J
    Gasiot, J
    David, JP
    Ecoffet, R
    Schrimpf, RD
    Galloway, KF
    JOURNAL OF APPLIED PHYSICS, 1997, 82 (08) : 4102 - 4107
  • [9] Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications
    Ko, DH
    Lee, NI
    Kim, YW
    Lee, MY
    THIN SOLID FILMS, 1998, 326 (1-2) : 56 - 59
  • [10] Simple method for evaluating process-induced charging damage to the gate oxide of metal-oxide-semiconductor devices
    Brozek, T
    Viswanathan, CR
    APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1770 - 1772