Synthesis and Electric Properties of GaN Films.

A study was made of the conditions of growth of GaN epitaxial films in a chloride-hydride system and during thermal decomposition of a gallium metallo-organic compound. In addition, the electric properties of the films obtained were studied. It was found that in the chloride method of growth the quality of the GaN films increases with an increase in the NH//3 concentration in the gaseous phase in comparison with the Ga concentration. In the case of films obtained from a gallium-organic compound the grain size in the film increases with an increase in the substrate temperature, and at 1000 degree C oriented growth with single-crystal sections in the film is observed.