共 50 条
- [3] DEPENDENCE OF THE ELECTROABSORPTION SIGNAL ON THE ELECTRIC FIELD IN CRYSTALS OF HIGH-RESISTANCE COMPENSATE GaAs. Soviet Physics - Lebedev Institute Reports (English translation of Kratkie Soobshcheniya po Fizike: Sbornik, AN SSSR, Fizicheskii Inst. im. P.N. Lebedeva), 1979, (02): : 9 - 12
- [4] FIELD ORIENTATION IN SPONTANEOUS ELECTROCONDUCTANCE EFFECT IN GAAS FIZIKA TVERDOGO TELA, 1974, 16 (09): : 2796 - 2797
- [5] INFLUENCE OF TEMPERATURE ON SPONTANEOUS ELECTROABSORPTION IN GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 256 - 256
- [6] ELECTROLYTE ELECTRIC FIELD MODULATED ELLIPSOMETRIC SPECTRUM OF GaAs. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1984, 5 (01): : 40 - 47
- [8] Frequency tunable THz source based on optical downconversion in orientation patterned GaAs. IRMMW-THz2005: The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, Vols 1 and 2, 2005, : 632 - 633