ORIENTATION OF THE FIELD IN THE SPONTANEOUS ELECTROABSORPTION IN GaAs.

被引:0
|
作者
Akopyan, R.M.
Berozashvili, Yu.N.
Dzhanelidze, M.B.
Dundua, A.V.
机构
来源
| 1600年 / 16期
关键词
Compendex;
D O I
暂无
中图分类号
学科分类号
摘要
SEMICONDUCTING GALLIUM COMPOUNDS
引用
收藏
相关论文
共 50 条
  • [1] HARMONICS OF ELECTROABSORPTION IN GaAs.
    Akopyan, R.M.
    Berozashvili, Yu.N.
    Dzhanedlidze, M.B.
    Dundua, A.V.
    Tsitsishvili, E.G.
    1600, (18):
  • [2] SPONTANEOUS ELECTROABSORPTION IN GAAS
    BEROZASHVILI, YN
    DUNDUA, AV
    LORDKIPA.DS
    FIZIKA TVERDOGO TELA, 1973, 15 (03): : 895 - 896
  • [3] DEPENDENCE OF THE ELECTROABSORPTION SIGNAL ON THE ELECTRIC FIELD IN CRYSTALS OF HIGH-RESISTANCE COMPENSATE GaAs.
    Georgobiani, A.N.
    Ivanov, L.N.
    Todua, P.A.
    Soviet Physics - Lebedev Institute Reports (English translation of Kratkie Soobshcheniya po Fizike: Sbornik, AN SSSR, Fizicheskii Inst. im. P.N. Lebedeva), 1979, (02): : 9 - 12
  • [4] FIELD ORIENTATION IN SPONTANEOUS ELECTROCONDUCTANCE EFFECT IN GAAS
    AKOPYAN, RM
    BEROZASH.YN
    DZHANELI.MB
    DUNDUA, AV
    FIZIKA TVERDOGO TELA, 1974, 16 (09): : 2796 - 2797
  • [5] INFLUENCE OF TEMPERATURE ON SPONTANEOUS ELECTROABSORPTION IN GAAS
    BEROZASHVILI, YN
    DUNDUA, AV
    IMNAISHVILI, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 256 - 256
  • [6] ELECTROLYTE ELECTRIC FIELD MODULATED ELLIPSOMETRIC SPECTRUM OF GaAs.
    Jia Gang
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1984, 5 (01): : 40 - 47
  • [7] SHALLOW IMPLANTS INTO GaAs.
    Graf, Volker
    Heuberger, Willi
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B19-20 : 388 - 391
  • [8] Frequency tunable THz source based on optical downconversion in orientation patterned GaAs.
    Kozlov, VG
    Bliss, D
    Vodopyanov, KL
    Fejer, MM
    Hurlbut, W
    Lee, YS
    IRMMW-THz2005: The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, Vols 1 and 2, 2005, : 632 - 633
  • [9] ION IMPLANTATION IN GaAs.
    Pearton, S.J.
    Poate, J.M.
    Sette, F.
    Gibson, J.M.
    Jacobson, D.C.
    Williams, J.S.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B19-20 : 369 - 380
  • [10] REVEALING OF DEFECTS IN GaAs.
    Min, Hui-Fang
    Shen, Bao-Liang
    Zhao, Zhe
    Xiyou jinshu, 1988, 7 (01): : 37 - 41