Study of tellurium adsorption processes on silicon by ellipsometry, RHEED and AES methods

被引：0

作者：

Pridachin, D.N. ^{[1
]}

Yakushev, M.V. ^{[1
]}

Sidorov, Yu.G. ^{[1
]}

Shvets, V.A. ^{[1
]}

机构：

[1] MCT MBE Laboratory, Institute of Semiconductor Physics, Lavrentiev av., 13, Novosibirsk, 630090, Russia

来源：

Applied Surface Science | 1999年 / 142卷 / 01期

关键词：

The present work is supported by Russian Foundation for Basic Research (Grant No. 97-02-18491). The authors wish to thank Dr. S.I. Chikichev for helpful discussions and assistance in manuscript preparation;

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页码：485 / 489