Study of tellurium adsorption processes on silicon by ellipsometry, RHEED and AES methods

被引：0
|
作者：
Pridachin, D.N. [1 ]
Yakushev, M.V. [1 ]
Sidorov, Yu.G. [1 ]
Shvets, V.A. [1 ]
机构：
[1] MCT MBE Laboratory, Institute of Semiconductor Physics, Lavrentiev av., 13, Novosibirsk, 630090, Russia
来源：
Applied Surface Science | 1999年 / 142卷 / 01期
关键词：
The present work is supported by Russian Foundation for Basic Research (Grant No. 97-02-18491). The authors wish to thank Dr. S.I. Chikichev for helpful discussions and assistance in manuscript preparation;
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摘要：
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页码：485 / 489
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