Annealing of 'intrinsic' and photo-induced defects in hydrogenated amorphous silicon

被引：0
|
作者：
Parsons, G.N. [1 ]
Wang, C. [1 ]
Lucovsky, G. [1 ]
机构：
[1] North Carolina State Univ, Raleigh, United States
来源：
Thin Solid Films | 1990年 / 194卷 / 1 -2 pt 2期
关键词：
Semiconducting Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：577 / 587
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