Annealing of 'intrinsic' and photo-induced defects in hydrogenated amorphous silicon

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作者
Parsons, G.N. [1 ]
Wang, C. [1 ]
Lucovsky, G. [1 ]
机构
[1] North Carolina State Univ, Raleigh, United States
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Semiconducting Silicon;
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页码:577 / 587
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