Optical and electrical properties of p-GaSe doped with Sb

被引：0

作者：

Shigetomi, Shigeru ^{[1
]}

Ikari, Tetsuo ^{[1
]}

Nishimura, Hideki ^{[1
]}

机构：

[1] Kurume Univ, Fukuoka, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 6 A期

关键词：

Antimony - Band structure - Crystal defects - Electron transitions - Emission spectroscopy - Hall effect - Photoluminescence - Semiconducting selenium compounds - Semiconductor doping - Thermal effects - Transport properties;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Measurements of photoluminescence (PL) and Hall effect have been made on Sb-doped p-GaSe. The PL spectra at 77 K are dominated by two new emission bands at 1.75 and 1.66 eV. The 1.66 emission band is enhanced by adding Sb. The temperature dependences of the peak energy and the PL intensity of 1.66 eV emission band reveal that the acceptor level is located at 0.09 eV above the valence band. The deep acceptor level located at 0.57 eV above the valence band is detected by using Hall effect measurements. We found that the deep acceptor level is probably associated with defects or defect complexes formed by Sb atoms in the interlayer.

引用

页码：2731 / 2734