Fatigue problems in ferroelectric thin films

被引：0
|
作者：
Wang, Y. [1 ]
Wong, K.H. [1 ]
Choy, C.L. [1 ]
机构：
[1] Structure Research Laboratory, Department of Astronomy and Applied Physics, University of Science and Technology of China, Hefei 230026, China
来源：
Physica Status Solidi (A) Applied Research | 2002年 / 191卷 / 02期
关键词：
Ferroelectric dynamic random access memories (FDRAM);
D O I：
10.1002/1521-396X(200206)191:23.0.CO;2-D
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：482 / 488
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