Electron microscopy study of the growth of Ge nanoparticles in SiO2

被引:0
作者
Bonafos, C.
Garrido, B.
Lopez, M.
Perez-Rodriguez, A.
Morante, J.R.
Kihn, Y.
Assayag, G. Ben
Claverie, A.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix
    Stavarache, Ionel
    Lepadatu, Ana-Maria
    Maraloiu, Adrian V.
    Teodorescu, Valentin S.
    Ciurea, Magdalena Lidia
    JOURNAL OF NANOPARTICLE RESEARCH, 2012, 14 (07)
  • [42] Energetics of Ge nucleation on SiO2 and implications for selective epitaxial growth
    Leonhardt, Darin
    Han, Sang M.
    SURFACE SCIENCE, 2009, 603 (16) : 2624 - 2629
  • [43] Scanning capacitance microscopy and spectroscopy on SiO2 films with embedded Ge and Si nanoclusters
    Beyer, R
    Beyreuther, E
    von Borany, J
    Weber, J
    MICROELECTRONIC ENGINEERING, 2004, 72 (1-4) : 207 - 212
  • [44] SiO2/Ge:SiO2/SiO2夹层结构红外光发射的起源
    沈今楷
    吴兴龙
    袁仁宽
    谭超
    邓树胜
    鲍希茂
    发光学报, 2001, (04) : 339 - 342
  • [45] Formation of Ge nanocrystals embedded in a SiO2 matrix: Transmission electron microscopy, x-ray absorption, and optical studies
    Kolobov, AV
    Wei, SQ
    Yan, WS
    Oyanagi, H
    Maeda, Y
    Tanaka, K
    PHYSICAL REVIEW B, 2003, 67 (19)
  • [46] Comparative study on photoluminescence from Ge/PS and Ge/SiO2 thin films
    Sun Xiao-jing
    Ma Shu-yi
    Wei Jin-jun
    Xu Xiao-li
    SPECTROSCOPY AND SPECTRAL ANALYSIS, 2008, 28 (09) : 2033 - 2037
  • [47] Distribution of double-well potentials in SiO2 and SiO2:Ge glasses
    Kogure, Y
    Kosugi, T
    Kobayashi, H
    PHYSICA B-CONDENSED MATTER, 1996, 219-20 : 314 - 316
  • [48] Study of initial growth of Cu on SiO2 and 3-mercaptopropyltrimethoxysilane-coated SiO2
    Hu, MH
    Noda, S
    Ogawa, Y
    Tsuji, Y
    Okubo, T
    Yamaguchi, Y
    Komiyama, H
    FUNDAMENTAL GAS-PHASE AND SURFACE CHEMISTRY OF VAPOR-PHASE DEPOSITION II AND PROCESS CONTROL, DIAGNOSTICS, AND MODELING IN SEMICONDUCTOR MANFACTURING IV, 2001, 2001 (13): : 41 - 46
  • [49] ELECTRONIC-STRUCTURES OF SIO2 AND SIO2-GE
    YIP, KL
    FOWLER, WB
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (04): : 584 - 584
  • [50] Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix
    Mestanza, S. N. M.
    Doi, I.
    Swart, J. W.
    Frateschi, N. C.
    JOURNAL OF MATERIALS SCIENCE, 2007, 42 (18) : 7757 - 7761