Electron microscopy study of the growth of Ge nanoparticles in SiO2

被引：0
|
作者：
Bonafos, C.
Garrido, B.
Lopez, M.
Perez-Rodriguez, A.
Morante, J.R.
Kihn, Y.
Assayag, G. Ben
Claverie, A.
机构：
来源：
| 2000年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Ge nanoparticles in SiO2 for near infrared photodetectors with high performance
    Ionel Stavarache
    Valentin Serban Teodorescu
    Petronela Prepelita
    Constantin Logofatu
    Magdalena Lidia Ciurea
    Scientific Reports, 9
  • [22] Conduction mechanism versus annealing in SiO2 films with Ge nanoparticles
    Palade, Catalin
    Lepadatu, Ana-Maria
    Stavarache, Ionel
    Teodorescu, Valentin Serban
    Ciurea, Magdalena Lidia
    2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 2013, : 31 - 34
  • [23] Ge nanoparticles in SiO2 for near infrared photodetectors with high performance
    Stavarache, Ionel
    Teodorescu, Valentin Serban
    Prepelita, Petronela
    Logofatu, Constantin
    Ciurea, Magdalena Lidia
    SCIENTIFIC REPORTS, 2019, 9 (1)
  • [24] Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
    Stavarache, Ionel
    Lepadatu, Ana-Maria
    Gheorghe, Nicoleta G.
    Costescu, Ruxandra M.
    Stan, George E.
    Marcov, Dan
    Slav, Adrian
    Iordache, Gheorghe
    Stoica, Tionica F.
    Iancu, Vladimir
    Teodorescu, Valentin S.
    Teodorescu, Cristian M.
    Ciurea, Magdalena Lidia
    JOURNAL OF NANOPARTICLE RESEARCH, 2011, 13 (01) : 221 - 232
  • [25] Grazing incidence X-ray study of Ge-nanoparticle formation in (Ge:SiO2)/SiO2 multilayers
    Salamon, K.
    Milata, O.
    Buljan, M.
    Desnica, U. V.
    Radic, N.
    Dubcek, P.
    Bernstorff, S.
    THIN SOLID FILMS, 2009, 517 (06) : 1899 - 1903
  • [26] Codeposited pentacene:perfluoropentacene grown on SiO2: A microstructural study by transmission electron microscopy
    Felix, Rocio
    Volz, Kerstin
    Gries, Katharina I.
    JOURNAL OF CRYSTAL GROWTH, 2017, 458 : 87 - 95
  • [27] Crystallisation of Ge nanoclusters in SiO2 caused by electron irradiation in TEM
    Klimenkov, M
    Matz, W
    Nepijko, SA
    Lehmann, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 179 (02) : 209 - 214
  • [28] Atomic force microscopy on SiO2 layers grown on Ge implanted silicon
    Raineri, V
    Lombardo, S
    Iacona, F
    LaVia, F
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 116 (1-4) : 482 - 485
  • [29] Deposition of SiO2 and SiO2:Ge films for optical applications in a matrix distributed electron cyclotron resonance reactor
    Daineka, D
    Bulkin, P
    Girard, G
    Bourée, JE
    ADVANCED MATERIALS FORUM II, 2004, 455-456 : 25 - 29
  • [30] Enhanced ultraviolet photoluminescence from SiO2/Ge:SiO2/SiO2 sandwiched structure
    Shen, JK
    Wu, XL
    Yuan, RK
    Tang, N
    Zou, JP
    Mei, YF
    Tan, C
    Bao, XM
    Siu, GG
    APPLIED PHYSICS LETTERS, 2000, 77 (20) : 3134 - 3136
12345