Electron microscopy study of the growth of Ge nanoparticles in SiO2

被引：0
|
作者：
Bonafos, C.
Garrido, B.
Lopez, M.
Perez-Rodriguez, A.
Morante, J.R.
Kihn, Y.
Assayag, G. Ben
Claverie, A.
机构：
来源：
| 2000年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] An electron microscopy study of the growth of Ge nanoparticles in SiO2
    Bonafos, C
    Garrido, B
    Lopez, M
    Perez-Rodriguez, A
    Morante, JR
    Kihn, Y
    Ben Assayag, G
    Claverie, A
    APPLIED PHYSICS LETTERS, 2000, 76 (26) : 3962 - 3964
  • [2] Thickness dependent growth of Ge nanoparticles in amorphous Ge/ SiO2 multilayers
    Pivac, B.
    Dubcek, P.
    Zorc, H.
    Bernstorff, S.
    Vlahovic, B.
    Zavasnik, J.
    VACUUM, 2021, 190
  • [3] Stress Evolution during Ge Nanoparticles Growth in a SiO2 Matrix
    Pivac, Branko
    Dubcek, Pavo
    Dasovic, Jasna
    Popovic, Jasminka
    Radic, Nikola
    Bernstorff, Sigrid
    Zavasnik, Janez
    Vlahovic, Branislav
    INORGANIC CHEMISTRY, 2018, 57 (23) : 14939 - 14952
  • [4] Transmission electron microscopy study of the platinum germanide formation process in the Ge/Pt/Ge/SiO2/Si structure
    Laszcz, A.
    Ratajczak, J.
    Czerwinski, A.
    Katcki, J.
    Srot, V.
    Phillipp, F.
    van Aken, P. A.
    Breil, N.
    Larrieu, G.
    Dubois, E.
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 154 (1-3): : 175 - 178
  • [5] Lateral, Ge, nanowire growth on SiO2
    Quitoriano, Nathaniel J.
    Kamins, Theodore I.
    NANOTECHNOLOGY, 2011, 22 (06)
  • [6] Luminescence from silicon nanoparticles in SiO2: atomic force microscopy and transmission electron microscopy studies
    Mayandi, J.
    Finstad, T. G.
    Foss, S.
    Thogersen, A.
    Serincan, U.
    Turan, R.
    PHYSICA SCRIPTA, 2006, T126 : 77 - 80
  • [7] STUDY OF Ge NANOPARTICLES EMBEDDED IN AN AMORPHOUS SiO2 MATRIX WITH PHOTOCONDUCTIVE PROPERTIES
    Lepadatu, A. -M.
    Stavarache, I.
    Stoica, T. F.
    Ciurea, M. L.
    DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2011, 6 (01) : 67 - 73
  • [8] GROWTH OF GE MICROCRYSTALS IN SIO2 THIN-FILM MATRICES - A RAMAN AND ELECTRON-MICROSCOPIC STUDY
    FUJII, M
    HAYASHI, S
    YAMAMOTO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04): : 687 - 694
  • [9] Formation of isolated Ge nanoparticles in thin continuous Ge/SiO2 multilayers
    Pivac, B.
    Dubcek, P.
    Dasovic, J.
    Zorc, H.
    Bernstorff, S.
    Zavasnik, J.
    Wu, M. H.
    Vlahovic, B.
    VACUUM, 2020, 179
  • [10] A kinetics study of the growth of Ge precipitates in SiO2 by coupling TEM and EELS
    Bonafos, C
    Lopez, M
    Garrido, B
    Perez-Rodriguez, A
    Morante, JR
    Montserrat, J
    Toufella, M
    Kihn, Y
    Ben Assayag, G
    Claverie, A
    Nejim, A
    Hemment, PLF
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1999, PROCEEDINGS, 1999, (164): : 157 - 160
12345