ELECTROREFLECTION INVESTIGATION OF THE CHARACTERISTICS OF THE ENERGY BAND STRUCTURE OF A TRANSITION LAYER NEAR THE SURFACE OF SILICON.

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作者：
Gavrilenko, V.I.
Evstigneev, A.M.
Zuev, V.A.
Litovchenko, V.G.
Snitko, O.V.
Tyagai, V.A.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1976年 / 10卷 / 06期
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摘要：
SEMICONDUCTING SILICON
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页码：640 / 643
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