Thermodynamic analysis on molecular beam epitaxy of GaN, InN and AlN

被引：0
|
作者：
Koukitu, Akinori [1 ]
Seki, Hisashi [1 ]
机构：
[1] Tokyo Univ of Agriculture and, Technology, Tokyo, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 06期
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D O I：
10.1143/jjap.36.l750
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