Thermodynamic analysis on molecular beam epitaxy of GaN, InN and AlN

被引：0

作者：

Koukitu, Akinori ^{[1
]}

Seki, Hisashi ^{[1
]}

机构：

[1] Tokyo Univ of Agriculture and, Technology, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1997年 / 36卷 / 06期

关键词：

D O I：

10.1143/jjap.36.l750

中图分类号：

学科分类号：

摘要：

引用

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