Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates

被引：0

作者：

Bai, J. ^{[1
]}

Dudley, M. ^{[1
]}

Chen, L. ^{[2
]}

Skromme, B.J. ^{[2
]}

Wagner, B. ^{[3
]}

Davis, R.F. ^{[3
]}

Chowdhury, U. ^{[4
]}

Dupuis, R.D. ^{[4
]}

机构：

[1] Department of Materials Science and Engineering, Stony Brook University, Stony Brook, NY 11794-2275, United States

[2] Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287-5706, United States

[3] Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907, United States

[4] School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, United States

来源：

Journal of Applied Physics | 2005年 / 97卷 / 11期

关键词：

Number:; N00014-01-1-0716; Acronym:; -; Sponsor:; 0324350; ECS; 0080719; NSF; Sponsor: National Science Foundation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

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