Effect of Silicon Nitride Cap on the Activation of Implanted Silicon in Gallium Arsenide

被引：0

作者：

Saito, Yoshihiro ^{[1
]}

Kagiyama, Tomohiro ^{[1
]}

Nakajima, Shigeru ^{[1
]}

机构：

[1] Electron Device Division, Sumitomo Electric Industries, Ltd., Sakae-ku, Yokohama 244-8588, 1, Taya-cho

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 08期

关键词：

Activation efficiency; Ga out-diffusion; GaAs MESFET; High temperature stress; SiN[!sub]x[!/sub] cap;

D O I：

10.1143/jjap.42.4924

中图分类号：

学科分类号：

摘要：

The effect of silicon nitride (SiNx) anneal cap on the activation efficiency (η) of the implanted Si in gallium arsenide (GaAs) was investigated. SiNx films of various N/Si ratios were prepared, changing the NH3/SiH4 source gas ratio in plasma enhanced chemical vapor deposition (PECVD). As a result, η of the n-layer was found to become the maximum when the SiNx had a slightly N-rich composition. Device simulation clarified that the maximum η, which was obtained with an annealing temperature of 805°C, was 75%. Stress measurements at high temperatures demonstrated that the compressive stress increment at 805°C hardly improved η. On the other hand, the amount of the Ga out-diffusion measured by the total reflection X-ray fluorescence (TXRF) was found to correspond to the trend of η. In the activation with the SiNx caps in this study, the Ga out-diffusion was more dominant than the stress.

引用

页码：4924 / 4927

页数：3