Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs

被引：0
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作者：
Barba, D. [1 ]
Aimez, V. [1 ]
Beauvais, J. [1 ]
Beerens, J. [1 ]
Drouin, D. [1 ]
Chicoine, M. [2 ]
Schiettekatte, F. [2 ]
机构：
[1] Dept. de Génie Élec., Université de Sherbrooke, Sherbrooke, Que. J1K 2R1, Canada
[2] Département de Physique, Université de Montréal, Montréal, Que. H3C 3J7, Canada
来源：
Journal of Applied Physics | 2004年 / 96卷 / 09期
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页码：4890 / 4893
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