PHOTOINDUCED REFRACTIVE INDEX CHANGES AND PHOTOLUMINESCENCE IN SEMICONDUCTOR-DOPED GLASSES.

被引:0
|
作者
Nattermann, K. [1 ]
Danielzik, B. [1 ]
von der Linde, D. [1 ]
机构
[1] Fachbereich Physik, Universität-GHS-Essen, Essen 1, D-4300, Germany
来源
Applied physics. A, Solids and surfaces | 1987年 / A44卷 / 02期
关键词
INTERFEROMETRY - Applications - LIGHT - Nonlinear Optical Effects - PHOTOLUMINESCENCE - SEMICONDUCTING CADMIUM COMPOUNDS - Applications;
D O I
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中图分类号
学科分类号
摘要
Transient refractive index changes of Cd(S,Se)-glasses induced by 10 ns layer pulses at 532 nm are determined from time-resolved transmission measurements of a Fabry-Perot interferometer containing samples of the semiconductor glass. Comparison of the transient index measurements with time-resolved photoluminescence supports an electron-hole-plasma model and suggests that the relaxation mechanism is Auger recombination of the electrons and the holes.
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页码:111 / 118
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