PHOTOINDUCED REFRACTIVE INDEX CHANGES AND PHOTOLUMINESCENCE IN SEMICONDUCTOR-DOPED GLASSES.

被引：0
|
作者：
Nattermann, K. [1 ]
Danielzik, B. [1 ]
von der Linde, D. [1 ]
机构：
[1] Fachbereich Physik, Universität-GHS-Essen, Essen 1, D-4300, Germany
来源：
Applied physics. A, Solids and surfaces | 1987年 / A44卷 / 02期
关键词：
INTERFEROMETRY - Applications - LIGHT - Nonlinear Optical Effects - PHOTOLUMINESCENCE - SEMICONDUCTING CADMIUM COMPOUNDS - Applications;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Transient refractive index changes of Cd(S,Se)-glasses induced by 10 ns layer pulses at 532 nm are determined from time-resolved transmission measurements of a Fabry-Perot interferometer containing samples of the semiconductor glass. Comparison of the transient index measurements with time-resolved photoluminescence supports an electron-hole-plasma model and suggests that the relaxation mechanism is Auger recombination of the electrons and the holes.
引用
收藏
页码：111 / 118
相关论文
共 50 条
  • [1] PHOTOINDUCED REFRACTIVE-INDEX CHANGES AND PHOTOLUMINESCENCE IN SEMICONDUCTOR-DOPED GLASSES
    NATTERMANN, K
    DANIELZIK, B
    VONDERLINDE, D
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (02): : 111 - 118
  • [2] REFRACTIVE-INDEX CHANGES DURING PHOTODARKENING IN SEMICONDUCTOR-DOPED GLASSES
    VANHAUDENARDE, A
    TRESPIDI, M
    FREY, R
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1994, 11 (08) : 1474 - 1479
  • [3] REFRACTIVE-INDEX VARIATION IN PHOTODARKENING PROCESS OF SEMICONDUCTOR-DOPED GLASSES
    VANHAUDENARDE, A
    TRESPIDI, M
    FREY, R
    ANNALES DE PHYSIQUE, 1995, 20 (02) : 115 - 116
  • [4] NONLINEAR OPTICAL PROPERTIES OF COMMERCIAL SEMICONDUCTOR-DOPED GLASSES.
    Roussignol, P.
    Ricard, D.
    Flytzanis, C.
    Applied physics. A, Solids and surfaces, 1987, A 44 (04): : 285 - 292
  • [5] Interferometric measurement of the refractive index and the thermo-optic coefficient of semiconductor-doped glasses
    De Nicola, S
    Ferraro, P
    Finizio, A
    Pierattini, G
    Pelli, S
    JOURNAL OF OPTICS A-PURE AND APPLIED OPTICS, 1999, 1 (06): : 702 - 705
  • [6] Different physical sources of the refractive index variation during photodarkening of semiconductor-doped glasses
    VanhaudenardePeoch, A
    Frey, R
    ANNALES DE PHYSIQUE, 1995, 20 (5-6) : 653 - 654
  • [7] SEMICONDUCTOR-DOPED GLASSES
    ZIMIN, LG
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (04): : 405 - 412
  • [8] INTENSITY-DEPENDENT PHOTOLUMINESCENCE SPECTRA OF SEMICONDUCTOR-DOPED GLASSES
    ZHENG, JP
    SHI, L
    CHOA, FS
    LIU, PL
    KWOK, HS
    APPLIED PHYSICS LETTERS, 1988, 53 (08) : 643 - 645
  • [9] Thermoluminescence in semiconductor-doped glasses
    Miyoshi, T
    Makidera, Y
    Kawamura, T
    Matsuo, N
    Kaneda, T
    JOURNAL OF LUMINESCENCE, 2003, 102 : 614 - 617
  • [10] SINGLE-STEP LASER FABRICATION OF REFRACTIVE MICROLENSES IN SEMICONDUCTOR-DOPED GLASSES
    BEADIE, G
    LAWANDY, NM
    OPTICS LETTERS, 1995, 20 (21) : 2153 - 2155
12345