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SELF-ALIGNED MOLYBDENUM GATE MOS-FETs.
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Singh, Awatar
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The molybdenum gate process has been employed for the fabrication of p-channel enhancement, depletion-type MOS-FETs. The sputter-deposited Mo film is used as the gate electrode and source and drain windows are formed by sputter etching technique combined with pyrolytically-deposited doped oxide diffusion technology. The p-channel MOS-FETs fabricated on n-silicon (III), with the resistivity in the range 3-6 ohm cm and a channel length of 8 mu m have a threshold voltage of 2. 5 v and drain-to-source breakdown voltage of 30 v. The modification process to reduce the threshold voltage and to form p-channel depletion MOS-FET is also indicated.
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页码：707 / 710
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