共 50 条
- [1] CALCULATION OF BARRIER CAPACITANCE OF A DIFFUSED P-N-JUNCTION WITH DEEP IMPURITIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (12): : 1991 - 1994
- [2] CAPACITANCE OF A P-N JUNCTION WITH DEEP IMPURITIES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (11): : 1403 - +
- [3] INVESTIGATION OF THE BARRIER CAPACITANCE OF DIFFUSED P-N JUNCTIONS IN SILICON SOVIET PHYSICS-SOLID STATE, 1961, 2 (08): : 1768 - 1770
- [6] DISTRIBUTION OF IMPURITIES IN P-TYPE REGION OF A DIFFUSED P-N JUNCTION IN INDIUM ANTIMONIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (12): : 2041 - +
- [8] DIFFUSED P-N JUNCTION SILICON RECTIFIERS BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03): : 661 - 684