OPAL silicon microvertex detector

被引：0

作者：

Allport, P.P. ^{[1
]}

Batley, J.R. ^{[1
]}

Capiluppi, P. ^{[1
]}

Carter, A.A. ^{[1
]}

Carter, J.R. ^{[1
]}

De Jong, S.J. ^{[1
]}

Dunwoody, U.C. ^{[1
]}

Gibson, V. ^{[1
]}

Glessing, W. ^{[1
]}

Goldey, P.R. ^{[1
]}

Goodrick, M.J. ^{[1
]}

Gorn, W. ^{[1
]}

Hammarstrom, R. ^{[1
]}

Hanson, G.G. ^{[1
]}

Hobbs, J.D. ^{[1
]}

et al ^{[1
]}

机构：

[1] Universita di Bologna, Bologna, Italy

来源：

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment | 1993年 / A324卷 / 1-2期

关键词：

Microelectronics - Microstrip devices - Particle accelerators - Semiconducting silicon - Signal to noise ratio;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A silicon strip microvertex detector has been designed, constructed and commissioned in the OPAL experiment at the LEP electron-positron collider. The microstrip devices incorporate a new FoxFET biassing scheme developed together with Micron Semiconductor Ltd., UK. The devices digitise with a precision close to 5 μm and have an exceptionally high signal-to-noise ratio. The associated microelectronics were all custom made for the OPAL project. The detector began operation in 1991 and has since continued to be part of the OPAL experiment, performing to a very high standard and opening up new areas of physics studies.

引用

页码：34 / 52