Homoepitaxial growth and luminescence characterization of GaN epilayer by RF-MBE on MOCVD-grown GaN substrate

被引：0
|
作者：
Kurai, S. [1 ]
Kubo, S. [1 ]
Okazaki, T. [1 ]
Manabe, S. [1 ]
Sugita, T. [1 ]
Kawabe, A. [1 ]
Yamada, Y. [1 ]
Taguchi, T. [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., Faculty of Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
来源：
Physica Status Solidi (A) Applied Research | 1999年 / 176卷 / 01期
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摘要：
11
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页码：459 / 463
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