Homoepitaxial growth and luminescence characterization of GaN epilayer by RF-MBE on MOCVD-grown GaN substrate

被引：0
|
作者：
Kurai, S. [1 ]
Kubo, S. [1 ]
Okazaki, T. [1 ]
Manabe, S. [1 ]
Sugita, T. [1 ]
Kawabe, A. [1 ]
Yamada, Y. [1 ]
Taguchi, T. [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., Faculty of Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube, Yamaguchi 755-8611, Japan
来源：
Physica Status Solidi (A) Applied Research | 1999年 / 176卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
11
引用
收藏
页码：459 / 463
相关论文
共 50 条
  • [1] Homoepitaxial growth and luminescence characterization of GaN epilayer by RF-MBE on MOCVD-grown GaN substrate
    Kurai, S
    Kubo, S
    Okazaki, T
    Manabe, S
    Sugita, T
    Kawabe, A
    Yamada, Y
    Taguchi, T
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1999, 176 (01): : 459 - 463
  • [2] Effect of pre-treatment of GaN substrate for homoepitaxial growth by RF-MBE
    Kubo, S
    Okazaki, T
    Manabe, S
    Kurai, S
    Taguchi, T
    OPTOELECTRONIC MATERIALS AND DEVICES II, 2000, 4078 : 58 - 65
  • [3] Polarity control of GaN grown on sapphire substrate by RF-MBE
    Xu, K
    Yano, N
    Jia, AW
    Yoshikawa, A
    Takahashi, K
    JOURNAL OF CRYSTAL GROWTH, 2002, 237 (1-4 II) : 1003 - 1007
  • [4] Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
    Paskova, T
    Tungasmita, S
    Valcheva, E
    Svedberg, EB
    Arnaudov, B
    Evtimova, S
    Persson, PÅ
    Henry, A
    Beccard, R
    Heuken, M
    Monemar, B
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5
  • [5] Effects of atomic hydrogen on the Growth of GaN grown by RF-MBE
    Okamoto, Y
    Hashiguchi, S
    Okada, Y
    Kawabe, M
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 82 - 85
  • [6] Influence on the inclusion of h-GaN domain of the mosaicity in c-GaN epilayer grown on (001) GaAs substrate by rf-MBE
    Hayashi, H
    Hayashida, A
    Jia, AW
    Kobayashi, M
    Yoshikawa, A
    Takahashi, K
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 475 - 478
  • [7] AlGaN/GaN MODFET regrown by rf-MBE on MOCVD templates
    Xie, J.
    Morkoc, H.
    Zhou, L.
    Smith, D. J.
    GALLIUM NITRIDE MATERIALS AND DEVICES II, 2007, 6473
  • [8] Comparison of dislocation properties in GaN epilayer grown by MOCVD with MBE
    Maruyama, T
    Ikeya, M
    Morishima, S
    Akimoto, K
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 224 - 227
  • [9] Evaluation of deep levels in GaN grown by RF-MBE on GaN template by capacitance DLTS
    Mitsunaga, T.
    Yagishita, Y.
    Kurouchi, M.
    Kishimoto, S.
    Osaka, J.
    Mizutani, T.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 2008, 5 (09): : 3032 - +
  • [10] Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates
    Shen, X. Q.
    Shimizu, M.
    Okumura, H.
    Xu, F. J.
    Shen, B.
    Zhang, G. Y.
    JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 2049 - 2053
12345