Nitrogen-atom incorporation at Si-SiO2 interfaces by a low-temperature (300C), pre-deposition, remote-plasma oxidation using N2O

被引：0

作者：

Lee, David R. ^{[1
]}

Lucovsky, Gerald ^{[1
]}

Denker, Mark S. ^{[2
]}

Magee, Charles ^{[2
]}

机构：

[1] Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695-8202, United States

[2] Evans East, Inc., Plainsboro, NJ 08536, United States

来源：

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | 1995年 / 13卷 / 03期

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页码：1671 / 1675