Electronic structures and optical properties of (GaP)n(AlP)n short-period superlattices with n=1 to 6

被引：0

作者：

Shibata, Gakuei ^{[1
]}

Nakayama, Takashi ^{[1
]}

Kamimura, Hiroshi ^{[1
]}

机构：

[1] Science Univ of Tokyo, Tokyo, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1994年 / 33卷 / 11期

关键词：

Approximation theory - Calculations - Crystal structure - Electronic structure - Mathematical models - Optical properties - Photoluminescence - Semiconducting gallium compounds - Semiconducting indium compounds;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The origin of the strong intensity of photoluminescence in the short-period superlattices consisting of a pair of indirect-gap semiconductors GaP and AlP. It is shown, through the calculation of electronic structures and optical properties by the norm-conserving pseudopotential method, that the clean-interface (GaP)n(AlP)n with n=1 and 2 are indirect-gap semiconductors while those with n=3 to 6 are pseudo-direct-gap semiconductors. The calculated layer-thickness dependence of band-gap energies is consistent with experimental results. The calculated transition strengths, however, are smaller than the observed ones. To solve this discrepancy, four models of disordering at the interface are considered and the effects of disordering on photoluminescence phenomena is investigated. It was shown that the alloying- and ordered-interface models are favorable for transition energies while the antisite-interface model is favorable for transition strength.

引用

页码：6121 / 6128