Space charge generation in ZnS:Mn alternating-current thin-film electroluminescent devices

被引：0

作者：

Shih, S. ^{[1
]}

Keir, P.D. ^{[1
]}

Wager, J.F. ^{[1
]}

Viljanen, J. ^{[1
]}

机构：

[1] Oregon State Univ, Corvallis, United States

来源：

| 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 78期

关键词：

Computer simulation - Electric properties - Electric space charge - Epitaxial growth - Ionization - Luminescent devices - Manganese - Phosphors - Semiconducting zinc compounds - Thermodynamics - Zinc sulfide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

An electrical characterization study of atomic layer epitaxy ZnS:Mn alternating-current thin-film electroluminescent (ACTFEL) devices as a function of the thickness of the phosphor layer is presented. The primary result of this study is that the amount of space charge which is generated in the phosphor layer during ACTFEL device operation increases as a function of increasing phosphor thickness. This conclusion is deduced from experimentally determined trends in the capacitance-voltage and internal charge-phosphor field characteristics. The origin of one manifestation of space charge generation is quantitatively modeled using a single sheet charge model. Space charge generation is attributed to impact ionization of zinc vacancies which are constituents of Cl-Zn vacancy self-activated complexes. A thermodynamic explanation for the existence of Zn vacancies in Cl-doped ZnS due to self-compensation is offered. Finally, two advantages of space charge generation are described; namely improved aging stability and a reduced threshold voltage increase with increasing phosphor thickness.

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