Application of arsenic doped polycrystalline silicon for microwave transistors

被引：0
|
作者：
Zhang, Shudan [1 ]
Chen, Tonghua [1 ]
机构：
[1] Nanjing Electronic Devices Inst, Nanjing, China
来源：
Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 1994年 / 14卷 / 03期
关键词：
Microwave transistors - Polycrystalline silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：241 / 245
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