Comments on 'anomalously large shift of absorption edge of GaSe-based layered crystals by applied electric field'

被引：0

作者：

机构：

[1] Segura, Alfredo

[2] Andres, Miguel V.

[3] Munoz, Vicente

来源：

Segura, Alfredo | 1600年 / 30期

关键词：

Semiconducting Gallium Compounds;

D O I：

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引用

共 22 条

[1] Anomalously large shift of absorption edge of GaSe-based layered crystal by applied electric field
Iwamura, Yasuo, 1600, (29):
[2] ANOMALOUSLY LARGE SHIFT OF ABSORPTION-EDGE OF GASE-BASED LAYERED CRYSTALS BY APPLIED ELECTRIC-FIELD - COMMENT
SEGURA, A
ANDRES, MV
MUNOZ, V
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (4A): : L608 - L609
[3] ANOMALOUSLY LARGE SHIFT OF ABSORPTION-EDGE OF GASE-BASED LAYERED CRYSTAL BY APPLIED ELECTRIC-FIELD
IWAMURA, Y
MORIYAMA, M
WATANABE, N
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (06): : L975 - L976
[4] PROPOSAL FOR MICROWAVE MODULATION OF LIGHT EMPLOYING SHIFT OF OPTICAL ABSORPTION EDGE WITH APPLIED ELECTRIC FIELD
EDEN, RC
COLEMAN, PD
PROCEEDINGS OF THE IEEE, 1963, 51 (12) : 1776 - &
[5] ABSORPTION-EDGE SHIFT - INTERNAL ELECTRIC-FIELD MODEL
YACOBI, BG
PHYSICS LETTERS A, 1975, 55 (05) : 313 - 314
[6] ANOMALOUS SHIFT OF ABSORPTION EDGE IN FERROELECTRIC BATIO3 UNDER AN ELECTRIC FIELD
FRIDKIN, VM
VERKHOVSKAYA, KA
APPLIED OPTICS, 1967, 6 (11) : 1825 - +
[7] INFLUENCE OF UNIAXIAL PRESSURE AND ELECTRIC-FIELD ON LONG-WAVELENGTH FUNDAMENTAL ABSORPTION-EDGE OF LAYERED BISMUTH OXYHALIDE CRYSTALS
SHTILIKH.MV
CHEPUR, DV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (06): : 1019 - &
[8] TEMPERATURE DEPENDENCE OF FIELD-INDUCED SHIFT OF ABSORPTION EDGE IN CDS AND CDSE SINGLE CRYSTALS
GUTSCHE, E
LANGE, H
PHYSICA STATUS SOLIDI, 1966, 13 (02): : K131 - &
[9] ELECTRIC-FIELD-INDUCED SHIFT OF FUNDAMENTAL ABSORPTION EDGE IN GAAS CDS AND CDTE FILMS
KIREEV, PS
ORLOVA, NN
SAURIN, VN
STRELTSO.LN
SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 1029 - +
[10] THE EFFECT OF AN EXTERNAL ELECTRIC FIELD ON THE SHAPE OF THE INTRINSIC ABSORPTION EDGE IN NON-CONDUCTING CRYSTALS
BULYANITSA, DS
SOVIET PHYSICS JETP-USSR, 1960, 11 (04): : 868 - 870

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