CHARGE-FREE ELECTRON BEAM LITHOGRAPHY.

被引：0

作者：

Anon

机构：

来源：

IBM technical disclosure bulletin | 1985年 / 28卷 / 07期

关键词：

ELECTRON BEAMS - INTEGRATED CIRCUIT MANUFACTURE;

D O I：

暂无

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学科分类号：

摘要：

This article relates generally to integrated circuit fabrication and more particularly to lithographic exposure of silicon wafers. Charge accumulation on a silicon wafer during lithographic exposure with an electron beam can be avoided by using a conductive lithographic thin film. Conventional electron beam lithographic thin films can be made conductive by the addition of graphite.

引用

共 50 条

[21] SHADOW PROJECTION MASK FOR X-RAY, ION AND ELECTRON BEAM LITHOGRAPHY.
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