CHARGE-FREE ELECTRON BEAM LITHOGRAPHY.

被引：0
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作者：
Anon
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来源：
IBM technical disclosure bulletin | 1985年 / 28卷 / 07期
关键词：
ELECTRON BEAMS - INTEGRATED CIRCUIT MANUFACTURE;
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暂无
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学科分类号：
摘要：
This article relates generally to integrated circuit fabrication and more particularly to lithographic exposure of silicon wafers. Charge accumulation on a silicon wafer during lithographic exposure with an electron beam can be avoided by using a conductive lithographic thin film. Conventional electron beam lithographic thin films can be made conductive by the addition of graphite.
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