Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

被引：0
|
作者：
机构：
[1] Chew, K.
[2] Rusli
[3] Yoon, S.F.
[4] Ahn, J.
[5] Ligatchev, V.
[6] Teo, E.J.
[7] Osipowicz, T.
[8] Watt, F.
来源：
Chew, K. | 1600年 / American Institute of Physics Inc.卷 / 92期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution
    Chew, K
    Rusli
    Yoon, SF
    Ahn, J
    Ligatchev, V
    Teo, EJ
    Osipowicz, T
    Watt, F
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) : 2937 - 2941
  • [2] Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition
    Cui, J
    Rusli
    Yoon, SF
    Yu, MB
    Chew, K
    Ahn, J
    Zhang, Q
    Teo, EJ
    Osipowicz, T
    Watt, F
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) : 2699 - 2705
  • [3] Improved hydrogenated amorphous silicon thin films by photon assisted microwave electron cyclotron resonance chemical vapor deposition
    Appl Phys Lett, 1 (67):
  • [4] Improved hydrogenated amorphous silicon thin films by photon assisted microwave electron cyclotron resonance chemical vapor deposition
    Song, YJ
    Anderson, WA
    APPLIED PHYSICS LETTERS, 1999, 74 (01) : 67 - 69
  • [5] Effect of pressure on the deposition of hydrogenated amorphous carbon films using the electron cyclotron resonance chemical vapor deposition
    Rusli
    Yoon, SF
    Yang, H
    Zhang, Q
    Ahn, J
    Fu, YL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1998, 16 (02): : 572 - 577
  • [6] Effect of pressure on the deposition of hydrogenated amorphous carbon films using the electron cyclotron resonance chemical vapor deposition
    Yoon, Rusli
    Yang, H.
    Zhang, Q.
    Ahn, J.
    Fu, Y.L.
    Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (02):
  • [7] Effect of microwave pulse on the deposition rate of hydrogenated amorphous silicon in the electron cyclotron resonance plasma deposition
    Sun Moon Univ, Asan, Korea, Republic of
    Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (9 B):
  • [8] Effects of composition on the microstructures and optical properties of hydrogenated amorphous silicon carbide films prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
    Chan, LH
    Chou, WZ
    Chou, LH
    AMORPHOUS AND NANOSTRUCTURED CARBON, 2000, 593 : 535 - 540
  • [9] EFFECTS OF MICROWAVE-POWER AND BIAS VOLTAGE ON DEPOSITION OF AMORPHOUS HYDROGENATED CARBON-FILMS USING ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITION
    MARUYAMA, K
    INOUE, T
    YAMAMOTO, M
    MORINAGA, T
    SAITOH, H
    KAMATA, K
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1994, 13 (24) : 1793 - 1796
  • [10] Radical fluxes in electron cyclotron resonance plasma chemical vapor deposition of amorphous silicon
    Zhang, M
    Nakayama, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (11): : 5965 - 5970
12345