Growth of high purity GaAs layers by vapour phase epitaxy

被引：0

作者：

Chand, K. ^{[1
]}

Purohit, R.K. ^{[1
]}

机构：

[1] Solid State Physics Lab, Delhi, India

来源：

Diffusion and Defect Data Pt.B: Solid State Phenomena | 1997年 / 55卷

关键词：

Carrier concentration - Film growth - Photoluminescence - Semiconducting gallium arsenide - Vapor phase epitaxy;

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学科分类号：

摘要：

In this paper we describe a vapour phase epitaxial (VPE) system, developed indigenously for the growth of GaAs thin films. We report on the films grown under kinetic controlled conditions. Undoped epilayers of thickness 5-7 μm and carrier concentrations of about 3-8×1014 cm-3 were reproducibly grown. Thickness uniformity in individual layers remain within ±2% over the substrate area of 2×2 cm2. The quality of the epitaxial layers were examined by photoluminescence studies at 20°K. These layers are useful for the development of GaAs PIN devices.

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页码：10 / 13