MINORITY-CARRIER INJECTION AND TRANSIENT RESPONSE OF A MOS CAPACITOR.

被引：0
|
作者：
Whelan, M.V.
机构：
来源：
Philips Research Report | 1975年 / 30卷 / 04期
关键词：
SEMICONDUCTOR DEVICES; FIELD EFFECT;
D O I：
暂无
中图分类号：
TN [电子技术、通信技术];
学科分类号：
0809 ;
摘要：
The influence of minority carriers injected by a p-n junction across a quasi-neutral n layer on the transient response of a MOS capacitor was measured and its behavior is explained quantitatively.
引用
收藏
页码：262 / 264
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