Use of carbon-free Ta2O5 thin-films as a gate insulator

被引:0
作者
Devine, R.A.B. [1 ]
Chaneliere, C. [1 ]
Autran, J.L. [1 ]
Balland, B. [1 ]
Paillet, P. [1 ]
Leray, J.L. [1 ]
机构
[1] France-Telecom - CNET/CNS, Meylan, France
来源
| / Elsevier Sci B.V., Amsterdam, Netherlands卷 / 36期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1 / 4
相关论文
共 50 条
  • [31] Permittivity Enhancement of Ta2O5/Co/Ta2O5 Trilayer Films
    Ding, Y.
    Yao, Y. D.
    Wu, K. T.
    Hsu, J. C.
    Hung, D. S.
    Wei, D. H.
    Lin, Y. H.
    IEEE TRANSACTIONS ON MAGNETICS, 2011, 47 (03) : 710 - 713
  • [32] SYNTHESIS OF HIGH-PURITY [TA(DPM)(4)]CL FOR PREPARATION OF TA2O5 THIN-FILMS BY MOCVD
    KOBAYASHI, I
    NIPPON KAGAKU KAISHI, 1992, (12) : 1515 - 1517
  • [33] DEPOSITION OF NEW PIEZOELECTRIC TA2O5 THIN-FILMS AND THEIR SURFACE ACOUSTIC-WAVE PROPERTIES
    NAKAGAWA, Y
    GOMI, Y
    OKADA, T
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5012 - 5017
  • [34] Infrared absorption peak due to Ta=O bonds in Ta2O5 thin films
    Ono, H
    Koyanagi, K
    APPLIED PHYSICS LETTERS, 2000, 77 (10) : 1431 - 1433
  • [35] Comparison of the temperature dependence of the mechanical dissipation in thin films of Ta2O5 and Ta2O5 doped with TiO2
    Martin, I. W.
    Chalkley, E.
    Nawrodt, R.
    Armandula, H.
    Bassiri, R.
    Comtet, C.
    Fejer, M. M.
    Gretarsson, A.
    Harry, G.
    Heinert, D.
    Hough, J.
    MacLaren, I.
    Michel, C.
    Montorio, J-L
    Morgado, N.
    Penn, S.
    Reid, S.
    Route, R.
    Rowan, S.
    Schwarz, C.
    Seidel, P.
    Vodel, W.
    Woodcraft, A. L.
    CLASSICAL AND QUANTUM GRAVITY, 2009, 26 (15)
  • [36] Leakage current in thin-films Ta2O5 on Si – is it a limiting factor for nanoscale dynamic memories?
    E. Atanassova
    A. Paskaleva
    Journal of Materials Science: Materials in Electronics, 2003, 14 : 671 - 675
  • [38] Leakage current in thin-films Ta2O5 on Si -: is it a limiting factor for nanoscale dynamic memories?
    Atanassova, E
    Paskaleva, A
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2003, 14 (10-12) : 671 - 675
  • [39] Ultra-thin Ta2O5/SiO2 gate insulator with TiN gate technology for 0.1 mu m MOSFETs
    Momiyama, Y
    Minakata, H
    Sugii, T
    1997 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS, 1997, : 135 - 136
  • [40] Electrical properties of thin SiON/Ta2O5 gate dielectric stacks
    Houssa, M
    Degraeve, R
    Mertens, PW
    Heyns, MM
    Jeon, JS
    Halliyal, A
    Ogle, B
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) : 6462 - 6467