Use of carbon-free Ta2O5 thin-films as a gate insulator

被引:0
作者
Devine, R.A.B. [1 ]
Chaneliere, C. [1 ]
Autran, J.L. [1 ]
Balland, B. [1 ]
Paillet, P. [1 ]
Leray, J.L. [1 ]
机构
[1] France-Telecom - CNET/CNS, Meylan, France
来源
| / Elsevier Sci B.V., Amsterdam, Netherlands卷 / 36期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1 / 4
相关论文
共 50 条
  • [1] Use of carbon-free Ta2O5 thin-films as a gate insulator
    Devine, RAB
    Chaneliere, C
    Autran, JL
    Balland, B
    Paillet, P
    Leray, JL
    MICROELECTRONIC ENGINEERING, 1997, 36 (1-4) : 61 - 64
  • [2] Thermal Ta2O5 films as a gate insulator for thin film capacitors
    Spassov, D
    Atanassova, E
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1998, 84 (05) : 453 - 466
  • [3] NEW PIEZOELECTRIC TA2O5 THIN-FILMS
    NAKAGAWA, Y
    GOMI, Y
    APPLIED PHYSICS LETTERS, 1985, 46 (02) : 139 - 140
  • [4] PROPERTIES OF TA2O5 AND TA2O5NX THIN-FILMS WAVEGUIDES
    KADZIELA, J
    LICZNERSKI, B
    PATELA, S
    RADOJEWSKI, J
    OPTICA APPLICATA, 1984, 14 (01) : 139 - 143
  • [5] MATERIAL CONSTANTS OF NEW PIEZOELECTRIC TA2O5 THIN-FILMS
    NAKAGAWA, Y
    OKADA, T
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (02) : 556 - 559
  • [6] MAGNETIC-PROPERTIES OF THE SENDUST TA2O5 MULTILAYER THIN-FILMS
    HUR, JH
    PARK, NT
    KWON, SI
    SONG, HS
    CHANG, HS
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (09) : 5137 - 5138
  • [7] RAPID THERMAL PROCESSED THIN-FILMS OF REACTIVELY SPUTTERED TA2O5
    PIGNOLET, A
    RAO, GM
    KRUPANIDHI, SB
    THIN SOLID FILMS, 1995, 258 (1-2) : 230 - 235
  • [8] ZETA POTENTIAL MEASUREMENTS OF TA2O5 AND SIO2 THIN-FILMS
    BOUSSE, L
    MOSTARSHED, S
    VANDERSHOOT, B
    DEROOIJ, NF
    GIMMEL, P
    GOPEL, W
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1991, 147 (01) : 22 - 32
  • [9] AGING INFLUENCE ON THE ABSORPTION AND LASER DAMAGE RESISTANCE OF TA2O5 THIN-FILMS
    WOLF, R
    ZSCHERPE, G
    WELSCH, E
    GOEPNER, V
    SCHAFER, D
    JOURNAL OF MODERN OPTICS, 1987, 34 (12) : 1585 - 1588
  • [10] INSITU ELLIPSOMETRIC ANALYSIS OF THE FORMATION PROCESS OF TA2O5 THIN-FILMS IN MOCVD
    AN, CH
    SUGIMOTO, K
    JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1991, 55 (01) : 58 - 66