Influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors

被引:0
|
作者
GM Research and Development Cent, Warren, United States [1 ]
机构
来源
J Cryst Growth | / 1-4卷 / 378-384期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] The influence of stoichiometry on the growth of tellurium-doped indium antimonide for magnetic field sensors
    Partin, DL
    Pelczynski, M
    Cooke, P
    Green, L
    Heremans, J
    Thrush, CM
    JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 378 - 384
  • [2] INFLUENCE OF PRESSURE ON THE KONDO EFFECT IN TELLURIUM-DOPED GALLIUM ANTIMONIDE
    BRANDT, NB
    DEMISHEV, SV
    MOSHCHALKOV, VV
    CHUDINOV, SM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 1067 - 1068
  • [3] NEGATIVE MAGNETORESISTANCE OF TELLURIUM-DOPED GALLIUM ANTIMONIDE
    BRANDT, NB
    DEMISHEV, SV
    DMITRIEV, AA
    MOSHCHALKOV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (04): : 461 - 462
  • [4] CHARACTERISTICS OF PHOTOCONDUCTIVITY OF TELLURIUM-DOPED CADMIUM ANTIMONIDE
    GUSEV, SM
    GRECHKO, VA
    GAVRILENKO, NV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06): : 705 - 706
  • [5] INDIRECT GAP LUMINESCENCE FROM TELLURIUM-DOPED GALLIUM ANTIMONIDE
    GALLANT, MIA
    VANDRIEL, HM
    SOLID STATE COMMUNICATIONS, 1979, 32 (11) : 1037 - 1039
  • [6] Study of properties of tellurium-doped indium phosphide as photoconversion material
    Leiderman A.Y.
    Saidov A.S.
    Khashaev M.M.
    Rakhmonov U.K.
    Leiderman, A. Yu., 1600, Allerton Press Incorporation (50): : 143 - 145
  • [7] BEHAVIOR OF TELLURIUM-DOPED GALLIUM ANTIMONIDE CRYSTALS UNDER HYDROSTATIC-PRESSURE
    BOLSHAKOV, LP
    ERMAKOVA, NG
    KOMOVA, EM
    LITVINSTASHEVSKA, E
    FILIPCHENKO, AS
    CHAIKINA, EI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (03): : 313 - 313
  • [8] Electrical and optical properties of indium antimonide doped by cadmium and tellurium
    Brodovoi, AV
    Pleskatch, PV
    Bunchuk, SG
    Zinets, OS
    Brodovoi, VA
    SIXTH INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS, 2003, 5065 : 158 - 164
  • [9] Autosolitons in low-resistivity indium antimonide and tellurium single crystals in a magnetic field
    Kamilov, I. K.
    Stepurenko, A. A.
    Gummetov, A. E.
    SEMICONDUCTORS, 2012, 46 (07) : 894 - 897
  • [10] Autosolitons in low-resistivity indium antimonide and tellurium single crystals in a magnetic field
    I. K. Kamilov
    A. A. Stepurenko
    A. E. Gummetov
    Semiconductors, 2012, 46 : 894 - 897