GaAs/AlGaAs DOUBLE-HETEROJUNCTION DEVICE FUNCTIONING AS A BIPOLAR TRANSISTOR AND INJECTION LASER FOR OPTOELECTRONIC INTEGRATED CIRCUITS.

被引：0

作者：

Hasumi, Yuji ^{[1
]}

Kozen, Atsuo ^{[1
]}

Temmyo, Jiro ^{[1
]}

Asahi, Hajime ^{[1
]}

机构：

[1] NTT, Electrical Communications Lab,, Atsugi, Jpn, NTT, Electrical Communications Lab, Atsugi, Jpn

来源：

Electron device letters | 1987年 / EDL-8卷 / 01期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

TRANSISTORS, BIPOLAR

引用

页码：10 / 12

共 39 条

[31] VERTICAL MONOLITHIC INTEGRATION OF A GAAS/ALGAAS V-CHANNELED SUBSTRATE INNER STRIPE LASER DIODE AND A HETEROJUNCTION BIPOLAR-TRANSISTOR
JAN, YH
LEE, SC
APPLIED PHYSICS LETTERS, 1990, 57 (26) : 2750 - 2752
[32] REALIZATION OF GAALAS/GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS I2L INTEGRATED-CIRCUITS
VANNEL, JP
CAMPS, T
FERREIRA, AS
TASSELLI, J
CAZARRE, A
MARTY, A
BAILBE, JP
JOURNAL DE PHYSIQUE III, 1991, 1 (04): : 557 - 567
[33] ANALYSIS OF DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR WITH HEAVILY DOPED P+-GAAS INXGA1-XAS STRAINED-LAYER SUPERLATTICE BASE
ZENG, Z
QI, M
ZHANG, HT
LUO, JS
SUPERLATTICES AND MICROSTRUCTURES, 1993, 13 (02) : 169 - 172
[34] ELECTRON SATURATION VELOCITY IN GA0.5INP0.5INP0.5P MEASURED IN A GALNP/GAAS/GALNP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR
LIU, W
HENDERSON, T
FAN, SK
ELECTRONICS LETTERS, 1993, 29 (21) : 1885 - 1887
[35] FABRICATION OF GAALAS/GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS (DHBT) FOR I2L INTEGRATED-CIRCUITS
BAILBE, JP
CAMPS, T
CAZARRE, A
JAMAI, J
MARTINS, A
MARTY, A
REY, G
TASSELLI, J
VANNEL, JP
REVUE DE PHYSIQUE APPLIQUEE, 1989, 24 (02): : 171 - 176
[36] GAAS/ALGAAS DOUBLE-GRADED HETEROJUNCTION BIPOLAR-TRANSISTOR PREPARED BY MBE WITH PRECISE TEMPERATURE CONTROL USING MODERN CONTROL-THEORY
OKADA, Y
ISHIKAWA, T
NAKANO, Y
TADA, K
FIRST INTERNATIONAL MEETING ON ADVANCED PROCESSING AND CHARACTERIZATION TECHNOLOGIES: FABRICATION AND CHARACTERIZATION OF SEMICONDUCTOR OPTOELECTRONIC DEVICES AND INTEGRATED CIRCUITS, VOLS 1 AND 2, 1989, : A191 - A194
[37] EFFECT OF MOLECULAR-BEAM EPITAXY GROWTH-CONDITIONS ON GAAS-ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR PERFORMANCE - BERYLLIUM INCORPORATION AND DEVICE RELIABILITY
STREIT, DC
OKI, AK
VELEBIR, JR
STOLT, KS
UMEMOTO, D
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 853 - 855
[38] Optical and transport properties of a double heterojunction GaAs/AlGaAs injection laser from the shift of the wavelength and the threshold current in a strong magnetic field
Smetsers, RCGM
van Etteger, AF
Bluyssen, HJA
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (02) : 121 - 127
[39] OPERATION OF A DOUBLE HETEROJUNCTION GAAS-ALGAAS INJECTION-LASER WITH A P-TYPE ACTIVE LAYER IN A STRONG MAGNETIC-FIELD
BLUYSSEN, HJA
VANRUYVEN, LJ
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (11) : 2190 - 2195

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