MOBILITY MEASUREMENTS WITH A STANDARD CONTACT RESISTANCE PATTERN.

被引：0

作者：

Look, D.C. ^{[1
]}

机构：

[1] Wright State Univ, Univ Research, Cent, Dayton, OH, USA, Wright State Univ, Univ Research Cent, Dayton, OH, USA

来源：

Electron device letters | 1987年 / EDL-8卷 / 04期

关键词：

SEMICONDUCTOR MATERIALS - Electric Conductivity;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The standard test pattern used for planar-contact resistance measurements yields values for normalized contact resistance, contact resistivity, and semiconductor sheet resistance. By applying a perpendicular magnetic field, additional data result, including bulk semiconductor mobility and sheet carrier concentration, and also the mobility of the material under contact. This technique is applied to a GaAs implanted layer designed for metal-semiconductor field-effect transistor (MESFET) applications. One advantage of the method is that a separate Hall-effect measurement is no longer necessary.

引用

页码：162 / 164