Cation dependence of the electronic structure of AlAs and GaAs

被引：0

作者：

Corkill, Jennifer L. ^{[1
]}

Rubio, A. ^{[1
]}

Cohen, Marvin L. ^{[1
]}

机构：

[1] Univ of California at Berkeley, Berkeley, United States

来源：

Materials science & engineering. B, Solid-state materials for advanced technology | 1994年 / B25卷 / 01期

基金：

美国国家科学基金会;

关键词：

Band structure - Computational methods - Ions - Mathematical models - Semiconducting aluminum compounds - Semiconducting gallium arsenide;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Effects of the cation potential on the electronic structure of AlAs and GaAs are studied using the ab initio pseudo-potential method. Differences between the band gaps and one-electron levels of AlAs and GaAs are explained in terms of the s, p and d angular components of the Al and Ga potentials. Substituting the s- and d-channels of Ga for the corresponding channels in the Al potential reduces the AlAs direct gap by 0.7 and 0.5 eV, respectively. A reduction in the ionicity of GaAs compared to AlAs is mostly due to the stronger Ga-s potential. Comparisons are made to a previous analysis of cation effects in the III-V nitrides.

引用

页码：79 / 84