Plasma-enhanced chemical vapor deposition of nitrogen-rich silicon oxynitride thin film for gate insulator application

被引：0
|
作者：
Qi, Wen-Jie [1 ]
Yu, Wei-Feng [1 ]
Li, Bing-Zong [1 ]
Liu, Jing [1 ]
Lu, Fang [1 ]
Zhang, Ming [1 ]
Dong, Guo-Sheng [1 ]
机构：
[1] Fudan Univ., Shanghai, China
来源：
Proceedings of SPIE - The International Society for Optical Engineering | 1994年 / 2364卷
关键词：
Gate insulator applications - Plasma enhanced deposition - Silicon oxynitride;
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页码：470 / 473
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