Selective distribution of arsenic precipitates in low-temperature-grown III-V heterostructures

被引:0
|
作者
Department of Electrical Engineering, National Central University, Chung-Li, Taiwan [1 ]
不详 [2 ]
机构
来源
Appl Phys Lett | / 1卷 / 52-54期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] OBSERVATION OF ARSENIC PRECIPITATES IN GAINAS GROWN AT LOW-TEMPERATURE ON INP
    IBBETSON, JP
    SPECK, JS
    GOSSARD, AC
    MISHRA, UK
    APPLIED PHYSICS LETTERS, 1993, 62 (18) : 2209 - 2211
  • [22] MICROSCOPIC CAPACITORS AND NEUTRAL INTERFACES IN III-V/IV/III-V SEMICONDUCTOR HETEROSTRUCTURES
    BIASIOL, G
    SORBA, L
    BRATINA, G
    NICOLINI, R
    FRANCIOSI, A
    PERESSI, M
    BARONI, S
    RESTA, R
    BALDERESCHI, A
    PHYSICAL REVIEW LETTERS, 1992, 69 (08) : 1283 - 1286
  • [23] Electronic devices based on III-V/V heterostructures
    Golding, TD
    Meyer, JR
    Huang, J
    Hoffman, CA
    Wang, EG
    Xu, JH
    Zborowski, JT
    NARROW GAP SEMICONDUCTORS 1995, 1995, (144): : 359 - 363
  • [24] THE ROLE OF EXCESS ARSENIC IN INTERFACE MIXING IN LOW-TEMPERATURE-GROWN ALAS/GAAS SUPERLATTICES
    LAHIRI, I
    NOLTE, DD
    CHANG, JCP
    WOODALL, JM
    MELLOCH, MR
    APPLIED PHYSICS LETTERS, 1995, 67 (09) : 1244 - 1246
  • [25] NOISE STUDIES OF HFETS ON LOW-TEMPERATURE-GROWN GAAS BUFFERS AND OF MESFETS WITH LOW-TEMPERATURE-GROWN GAAS PASSIVATION
    VANRHEENEN, AD
    LIN, Y
    TEHRANI, S
    CHEN, CL
    SMITH, FW
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 82 - 85
  • [26] TRANSPORT-PROPERTIES OF III-V HETEROSTRUCTURES
    MARTIN, GM
    ACTA ELECTRONICA, 1988, 28 : 4 - 6
  • [27] Growth of III-V semiconductor nanowires and their heterostructures
    Li, Ang
    Zou, Jin
    Han, Xiaodong
    SCIENCE CHINA-MATERIALS, 2016, 59 (01) : 51 - 91
  • [28] Coherent and incoherent relaxation in III-V heterostructures
    Rocher, A
    Snoeck, E
    THIN FILMS-STRESSES AND MECHANICAL PROPERTIES VIII, 2000, 594 : 169 - 174
  • [29] Observation of Coulomb staircases in arsenic precipitates in low-temperature grown GaAs
    Fan, JC
    Yong, BL
    Yang, YC
    Chen, YF
    Lee, WC
    Hsu, TM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1998, 169 (01): : R7 - R8
  • [30] Thermal oxidation of III-V materials and heterostructures
    Hussey, RJ
    Driad, R
    Sproule, GI
    Moisa, S
    Fraser, JW
    Wasilewski, ZR
    McCaffrey, JP
    Landheer, D
    Graham, MJ
    CORROSION AND CORROSION PROTECTION, 2001, 2001 (22): : 645 - 654