Reactive ion etching of benzocyclobutene using a silicon nitride dielectric etch mask

被引：0
|
作者：
Siemens AG, Munich, Germany [1 ]
机构：
来源：
J Electrochem Soc | / 9卷 / 3238-3240期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS
    ADESIDA, I
    MAHAJAN, A
    ANDIDEH, E
    KHAN, MA
    OLSEN, DT
    KUZNIA, JN
    APPLIED PHYSICS LETTERS, 1993, 63 (20) : 2777 - 2779
  • [22] Reactive ion etch of silicon nitride spacer with high selectivity to oxide
    Regis, JM
    Joshi, AM
    Lill, T
    Yu, M
    1997 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP - ASMC 97 PROCEEDINGS: THEME - THE QUEST FOR SEMICONDUCTOR MANUFACTURING EXCELLENCE: LEADING THE CHARGE INTO THE 21ST CENTURY, 1997, : 252 - 256
  • [23] ScAlN etch mask for highly selective silicon etching
    Henry, Michael David
    Young, Travis R.
    Griffin, Ben
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (05):
  • [24] Self-adjusting boron nitride mask for Reactive-Ion Etching
    Schwanitz, Konrad
    Langenschwarz, Marco
    Fricke, Otto
    INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM) 2016 PROCEEDINGS OF TECHNICAL PAPERS, 2016,
  • [25] Silicon Nanopillars Formed by Reactive Ion Etching Using a Self-Organized Gold Mask
    Electron Physics Laboratory, Dept. of Elec. and Commun. Eng., Helsinki University of Technology, P.O. Box 3000, FIN-02015 Hut, Finland
    Phys Scr T, (263-265):
  • [26] Silicon nanopillars formed by reactive ion etching using a self-organized gold mask
    Ovchinnikov, V
    Malinin, A
    Novikov, S
    Tuovinen, C
    PHYSICA SCRIPTA, 1999, T79 : 263 - 265
  • [27] Fabrication of Deep Trenches in Silicon Wafer using Deep Reactive Ion Etching with Aluminum Mask
    Ganji, Bahram Azizollah
    Majlis, Burhanuddin Yeop
    SAINS MALAYSIANA, 2009, 38 (06): : 889 - 894
  • [28] Controlling the etch selectivity of silicon using low-RF power HBr reactive ion etching
    Chien, Kun-Chieh
    Chang, Chih-Hao
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2022, 40 (06):
  • [29] REACTIVE ION ETCH SLOPE CONTROL FOR IMAGES FORMED IN SILICON NITRIDE.
    Anon
    IBM technical disclosure bulletin, 1986, 28 (08):
  • [30] Reactive ion etching characteristics of partially-cured benzocyclobutene
    Yang, Yang
    Song, Zhen
    Du, Yuxin
    Wang, Zheyao
    2014 15TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2014, : 862 - 866
12345