Reactive ion etching of benzocyclobutene using a silicon nitride dielectric etch mask

被引:0
|
作者
Siemens AG, Munich, Germany [1 ]
机构
来源
J Electrochem Soc | / 9卷 / 3238-3240期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] REACTIVE ION ETCHING OF BENZOCYCLOBUTENE USING A SILICON-NITRIDE DIELECTRIC ETCH MASK
    SCHIER, M
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (09) : 3238 - 3240
  • [2] ETCH MECHANISM IN THE REACTIVE ION ETCHING OF SILICON-NITRIDE
    DULAK, J
    HOWARD, BJ
    STEINBRUCHEL, C
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03): : 775 - 778
  • [3] Deep reactive ion etching of silicon using an aluminum etching mask
    Wang, WC
    Ho, JN
    Reinhall, P
    OPTO-IRELAND 2002: OPTICS AND PHOTONICS TECHNOLOGIES AND APPLICATIONS, PTS 1 AND 2, 2003, 4876 : 633 - 640
  • [4] Deep reactive ion etching of silicon using an aluminum etching mask
    Wang, WC
    Ho, JN
    Reinhall, P
    ASDAM '02, CONFERENCE PROCEEDINGS, 2002, : 31 - 34
  • [5] Batch reactive ion etching of gallium nitride using photoresist as a mask
    Dineen, M
    Lee, S
    Deng, LG
    Goodyear, AL
    Welch, C
    5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS, 2004, : 2573 - 2576
  • [6] Patterning of benzocyclobutene by reactive ion etching
    Tacito, RD
    Steinbruchel, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (08) : 2695 - 2697
  • [7] Iron nitride mask and reactive ion etching of GaN films
    Lee, H
    Harris, JS
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (04) : 185 - 189
  • [8] Iron nitride mask and reactive ion etching of GaN films
    Heon Lee
    James S. Harris
    Journal of Electronic Materials, 1998, 27 : 185 - 189
  • [9] Spatial variation of the etch rate for deep etching of silicon by reactive ion etching
    Andersen, Bo Asp Moller
    Hansen, Ole
    Kristensen, Martin
    Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena, 1997, 15 (04):
  • [10] Spatial variation of the etch rate for deep etching of silicon by reactive ion etching
    Andersen, BAM
    Hansen, O
    Kristensen, M
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 993 - 999