Saturation adsorption reaction of cracked Si2H6 on Si(001) and Ge(001)

被引：0
|
作者：
Suda, Yoshiyuki [1 ]
Misato, Yasuhiro [1 ]
Shiratori, Daiju [1 ]
Oryu, Katuya [1 ]
Yamashita, Mitsutomi [1 ]
机构：
[1] Tokyo Univ of Agriculture and, Technology, Tokyo, Japan
来源：
Applied Surface Science | 1998年 / 130-132卷
关键词：
Auger electron spectroscopy - Cracking (chemical) - Epitaxial growth - Monolayers - Reflection high energy electron diffraction - Saturation (materials composition) - Semiconducting germanium - Semiconducting silicon - Silanes - Surface phenomena - Surface structure;
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摘要：
We have investigated the adsorption process of thermally cracked Si2H6 on a Si(001) and a Ge(001) surface using high-energy electron diffraction (RHEED) and Auger electron spectroscopy (AES) techniques. Upon exposure to thermally cracked Si2H6, their surface periodicities changed from 2×1 to 1×1, and the Si coverage determined using a Ge(001) surface is self-limited and its value is saturated at approximately 1 ML under the cracking temperatures from 200 to around 400 °C. The rates of the Si(001) and Ge(001) surface periodicity changes as a function of thermally-cracked-Si2H6 dose are almost the same. The cracking conditions meet those of silylen (:SiH2) formation. The AES and RHEED analyses also indicate that the 1×1 surface is strongly related to the structure of the surface saturated with a monolayer of Si adsorbates. The atomically flat 1×1 1 ML saturation adsorption process is expected to meet Si/Ge Atomic layer epitaxy (ALE) growth conditions.
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页码：304 / 309
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