Coulomb blockade effect of carriers in nc-Si embedded in ultrathin SiO2 Films

被引：0
|
作者：
Shi, Jianjun [1 ]
Wu, Liangcai [1 ]
Bao, Yun [1 ]
Liu, Jiayu [1 ]
Ma, Zhongyuan [1 ]
Dai, Min [1 ]
Huang, Xinfan [1 ]
Li, Wei [1 ]
Xu, Jun [1 ]
Chen, Kunji [1 ]
机构：
[1] Lab. of Solid State Microstructures, Dept. of Phys., Nanjing Univ., Nanjing 210093, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2003年 / 24卷 / 01期
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摘要：
11
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页码：29 / 33
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