Photoelectric properties of GaSb Schottky diodes

被引:0
作者
机构
来源
J Appl Phys | / 4卷 / 1813期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
[41]   INFLUENCE OF A MAGNETIC-FIELD ON THE PHOTOELECTRIC EFFECT IN P-TYPE INAS SCHOTTKY DIODES [J].
MALININ, YG ;
SLOBODCHIKOV, SV ;
FILARETOVA, GM ;
FETISOVA, VM .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06) :685-688
[42]   Electrical properties of quasi-vertical Schottky diodes [J].
Witte, W. ;
Fahle, D. ;
Koch, H. ;
Heuken, M. ;
Kalisch, H. ;
Vescan, A. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 27 (08)
[43]   PROPERTIES OF GAP SCHOTTKY BARRIER DIODES AT ELEVATED TEMPERATURES [J].
NANNICHI, Y ;
PEARSON, GL .
SOLID-STATE ELECTRONICS, 1969, 12 (05) :341-&
[44]   Electrical and photovoltaic properties of Cr/Si Schottky diodes [J].
Tatar, Beyhan ;
Bulgurcuoglu, A. Evrim ;
Gokdemir, Pinar ;
Aydogan, Pelin ;
Yilmazer, Deneb ;
Ozdemir, Orhan ;
Kutlu, Kubilay .
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY, 2009, 34 (12) :5208-5212
[45]   INFLUENCE OF REGULAR SURFACE RELIEF ON THE PROPERTIES OF SCHOTTKY DIODES [J].
BELYAKOV, LV ;
GORYACHEV, DN ;
SRESELI, OM .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (10) :1205-1206
[46]   Electrophysical properties of Schottky diodes with inhomogeneous contact surface [J].
Ismayilov, T. H. ;
Aslanova, A. R. .
SUPERLATTICES AND MICROSTRUCTURES, 2016, 90 :68-76
[47]   Electrical and structural properties of Re/GaAs Schottky diodes [J].
Lin, CC ;
Wu, MC .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) :3893-3896
[48]   InAs/AlSb/GaSb resonant interband tunneling diodes and Au-on-InAs/AlSb-superlattice Schottky diodes for logic circuits [J].
Chow, DH ;
Dunlap, HL ;
Williamson, W ;
Enquist, S ;
Gilbert, BK ;
Subramaniam, S ;
Lei, PM ;
Bernstein, GH .
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (02) :69-71
[49]   ELECTRICAL CHARACTERIZATION OF INSITU AL-GASB SCHOTTKY DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].
POOLE, I ;
LEE, ME ;
SINGER, KE .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (09) :881-885
[50]   PHOTOELECTRIC PROPERTIES OF Al/In2Se3 SCHOTTKY BARRIERS [J].
Bodnar, I. V. ;
Rud, V. Yu. ;
Rud, Yu. V. ;
Gorbachev, D. V. .
JOURNAL OF APPLIED SPECTROSCOPY, 2008, 75 (03) :456-459